ACGRAT105L-HF Comchip Technology
Hersteller: Comchip Technology
Description: DIODE GEN PURP 1KV 1A 2010
Packaging: Tape & Reel (TR)
Package / Case: 2010 (5025 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 2010
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A 2010
Packaging: Tape & Reel (TR)
Package / Case: 2010 (5025 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 2010
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.26 EUR |
6000+ | 0.25 EUR |
9000+ | 0.22 EUR |
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Technische Details ACGRAT105L-HF Comchip Technology
Description: DIODE GEN PURP 1KV 1A 2010, Packaging: Tape & Reel (TR), Package / Case: 2010 (5025 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: 2010, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote ACGRAT105L-HF nach Preis ab 0.23 EUR bis 0.97 EUR
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ACGRAT105L-HF | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 1KV 1A 2010 Packaging: Cut Tape (CT) Package / Case: 2010 (5025 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: 2010 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 70569 Stücke: Lieferzeit 21-28 Tag (e) |
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ACGRAT105L-HF | Hersteller : Comchip Technology | Rectifiers LOW VF 1A 1000V AEC-Q101 |
auf Bestellung 11017 Stücke: Lieferzeit 14-28 Tag (e) |
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