ADS065J016G3-ASATH Sanan Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.03 EUR |
| 10+ | 6.49 EUR |
| 120+ | 5.77 EUR |
| 270+ | 5.76 EUR |
| 510+ | 5.19 EUR |
| 1020+ | 4.35 EUR |
| 5010+ | 4.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ADS065J016G3-ASATH Sanan Semiconductor
Description: DIODE 650V-16A TO247-3L, COMMON, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 25A, Supplier Device Package: TO-247-3L, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A, Current - Reverse Leakage @ Vr: 24 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote ADS065J016G3-ASATH nach Preis ab 9.48 EUR bis 11.30 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ADS065J016G3-ASATH | Hersteller : Luminus Devices Inc. |
 Description: DIODE 650V-16A TO247-3L, COMMONPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247-3L Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
|