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ADS120J005D3-ASARH

ADS120J005D3-ASARH Luminus Devices Inc.

SananSemiconductorADS120J005D3Datasheet.pdf
Hersteller: Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 22A TO2522L
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 22A
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.09 EUR
10+4.65 EUR
Mindestbestellmenge: 3 Stücke
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Technische Details ADS120J005D3-ASARH Luminus Devices Inc.

Description: DIODE SIL CARB 1200V 22A TO2522L, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2L, Current - Average Rectified (Io): 22A, Capacitance @ Vr, F: 400pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote ADS120J005D3-ASARH

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ADS120J005D3-ASARH ADS120J005D3-ASARH Luminus Devices Inc. SananSemiconductorADS120J005D3Datasheet.pdf Description: DIODE SIL CARB 1200V 22A TO2522L
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 22A
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ADS120J005D3-ASARH ADS120J005D3-ASARH Sanan Semiconductor ADS120J005D3_ASARH-3440119.pdf SiC Schottky Diodes 1200V 5A, TO252-2L, Auto Grade
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ADS120J005D3-ASARH SananSemiconductorADS120J005D3Datasheet.pdf
ADS120J005D3-ASARH
Hersteller: Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 22A TO2522L
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 22A
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ADS120J005D3-ASARH ADS120J005D3_ASARH-3440119.pdf
ADS120J005D3-ASARH
Hersteller: Sanan Semiconductor
SiC Schottky Diodes 1200V 5A, TO252-2L, Auto Grade
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH