ADS12B3-ASARH Sanan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 1.32 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.68 EUR |
| 5000+ | 0.67 EUR |
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Technische Details ADS12B3-ASARH Sanan Semiconductor
Description: DIODE SIL CARBIDE 1200V 1A SMBF, Packaging: Tape & Reel (TR), Package / Case: DO-221AA, SMB Flat Leads, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 1A, Supplier Device Package: SMBF, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A, Current - Reverse Leakage @ Vr: 8 µA @ 1200 V.
Weitere Produktangebote ADS12B3-ASARH nach Preis ab 0.73 EUR bis 2.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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ADS12B3-ASARH | Sanan Power Semiconductor |
 Description: DIODE SIL CARBIDE 1200V 1A SMBFPackaging: Cut Tape (CT) Package / Case: DO-221AA, SMB Flat Leads Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Current - Reverse Leakage @ Vr: 8 µA @ 1200 V |
auf Bestellung 2166 Stücke: Lieferzeit 10-14 Tag (e) |
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| ADS12B3-ASARH |
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Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.67 EUR |
| 13+ | 1.68 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 2000+ | 0.73 EUR |