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ADS12B3-ASARH

ADS12B3-ASARH Sanan Semiconductor

ADS12B3-ASARH.pdf Hersteller: Sanan Semiconductor
SiC Schottky Diodes 1200V 1A, SMBF, Auto Grade
auf Bestellung 4146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.65 EUR
10+1.11 EUR
100+0.86 EUR
500+0.68 EUR
1000+0.58 EUR
2500+0.57 EUR
5000+0.51 EUR
Mindestbestellmenge: 2
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Technische Details ADS12B3-ASARH Sanan Semiconductor

Description: DIODE SIL CARBIDE 1200V 1A SMBF, Packaging: Tape & Reel (TR), Package / Case: DO-221AA, SMB Flat Leads, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 1A, Supplier Device Package: SMBF, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A, Current - Reverse Leakage @ Vr: 8 µA @ 1200 V.

Weitere Produktangebote ADS12B3-ASARH nach Preis ab 0.58 EUR bis 1.67 EUR

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ADS12B3-ASARH ADS12B3-ASARH Hersteller : Sanan Power Semiconductor ADS12B3-ASARH.pdf Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 4964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
16+1.12 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
ADS12B3-ASARH ADS12B3-ASARH Hersteller : Sanan Power Semiconductor ADS12B3-ASARH.pdf Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
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Im Einkaufswagen  Stück im Wert von  UAH