| Anzahl | Preis |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 5.4 EUR |
| 100+ | 4.28 EUR |
| 500+ | 3.71 EUR |
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Technische Details AFGB30T65SQDN onsemi
Description: IGBT 650V 60A TO-263, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 220 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 56 nC, Test Condition: 400V, 30A, 6Ohm, 15V, Td (on/off) @ 25°C: 14.5ns/63.2ns, Supplier Device Package: TO-263 (D2Pak), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Reverse Recovery Time (trr): 245 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote AFGB30T65SQDN nach Preis ab 4.05 EUR bis 8.47 EUR
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AFGB30T65SQDN | onsemi |
 Description: IGBT 650V 60A TO-263Qualification: AEC-Q101 Grade: Automotive Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Active Gate Charge: 56 nC Test Condition: 400V, 30A, 6Ohm, 15V Td (on/off) @ 25°C: 14.5ns/63.2ns Supplier Device Package: TO-263 (D2Pak) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Reverse Recovery Time (trr): 245 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Power - Max: 220 W Current - Collector Pulsed (Icm): 120 A |
auf Bestellung 734 Stücke: Lieferzeit 10-14 Tag (e) |
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| AFGB30T65SQDN | ON Semiconductor |
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auf Bestellung 725 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AFGB30T65SQDN |
|
Hersteller: onsemi
Description: IGBT 650V 60A TO-263
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 56 nC
Test Condition: 400V, 30A, 6Ohm, 15V
Td (on/off) @ 25°C: 14.5ns/63.2ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 245 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 220 W
Current - Collector Pulsed (Icm): 120 A
Description: IGBT 650V 60A TO-263
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 56 nC
Test Condition: 400V, 30A, 6Ohm, 15V
Td (on/off) @ 25°C: 14.5ns/63.2ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 245 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 220 W
Current - Collector Pulsed (Icm): 120 A
auf Bestellung 734 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.47 EUR |
| 10+ | 5.65 EUR |
| 100+ | 4.05 EUR |
| AFGB30T65SQDN |
|
Hersteller: ON Semiconductor
auf Bestellung 725 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH