AFGB40T65RQDN onsemi
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.72 EUR |
| 10+ | 6.43 EUR |
| 100+ | 4.56 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details AFGB40T65RQDN onsemi
Description: IGBT FIELD STOP 650V 68A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 21ns/77ns, Switching Energy: 470µJ (on), 420µJ (off), Test Condition: 400V, 20A, 3Ohm, 15V, Gate Charge: 51 nC, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 339.37 W.
Weitere Produktangebote AFGB40T65RQDN
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
AFGB40T65RQDN | onsemi |
Description: IGBT FIELD STOP 650V 68A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 21ns/77ns Switching Energy: 470µJ (on), 420µJ (off) Test Condition: 400V, 20A, 3Ohm, 15V Gate Charge: 51 nC Current - Collector (Ic) (Max): 68 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 339.37 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
AFGB40T65RQDN | onsemi |
IGBTs 650V/40A FS4 SCR IGBT D2PAK AUTOMOTIVE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
AFGB40T65RQDN | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 169.68W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AFGB40T65RQDN |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AFGB40T65RQDN |
|
Hersteller: onsemi
IGBTs 650V/40A FS4 SCR IGBT D2PAK AUTOMOTIVE
IGBTs 650V/40A FS4 SCR IGBT D2PAK AUTOMOTIVE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGB40T65RQDN |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 169.68W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: automotive industry
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 169.68W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH