| Anzahl | Preis |
|---|---|
| 1+ | 5.93 EUR |
| 10+ | 4.31 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.96 EUR |
| 800+ | 2.87 EUR |
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Technische Details AFGB40T65RQDN onsemi
Description: IGBT FIELD STOP 650V 68A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 21ns/77ns, Switching Energy: 470µJ (on), 420µJ (off), Test Condition: 400V, 20A, 3Ohm, 15V, Gate Charge: 51 nC, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 339.37 W.
Weitere Produktangebote AFGB40T65RQDN nach Preis ab 4.92 EUR bis 7.43 EUR
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AFGB40T65RQDN | onsemi |
 Description: IGBT FIELD STOP 650V 68A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 21ns/77ns Switching Energy: 470µJ (on), 420µJ (off) Test Condition: 400V, 20A, 3Ohm, 15V Gate Charge: 51 nC Current - Collector (Ic) (Max): 68 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 339.37 W |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AFGB40T65RQDN |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.43 EUR |
| 10+ | 4.92 EUR |