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AFGB40T65RQDN

AFGB40T65RQDN onsemi

afgb40t65rqdn-d.pdf Hersteller: onsemi
Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.61 EUR
1600+2.53 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AFGB40T65RQDN onsemi

Description: IGBT FIELD STOP 650V 68A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 21ns/77ns, Switching Energy: 470µJ (on), 420µJ (off), Test Condition: 400V, 20A, 3Ohm, 15V, Gate Charge: 51 nC, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 339.37 W.

Weitere Produktangebote AFGB40T65RQDN nach Preis ab 2.87 EUR bis 7.08 EUR

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AFGB40T65RQDN AFGB40T65RQDN Hersteller : onsemi AFGB40T65RQDN-D.PDF IGBTs IGBT - 650 V 40 A - Short circuit rated FS4 - Automotive qualified
auf Bestellung 1759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.04 EUR
10+4.66 EUR
100+3.31 EUR
500+3.29 EUR
800+2.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AFGB40T65RQDN AFGB40T65RQDN Hersteller : onsemi afgb40t65rqdn-d.pdf Description: IGBT FIELD STOP 650V 68A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/77ns
Switching Energy: 470µJ (on), 420µJ (off)
Test Condition: 400V, 20A, 3Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 339.37 W
auf Bestellung 13899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.08 EUR
10+4.68 EUR
100+3.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AFGB40T65RQDN Hersteller : ON Semiconductor afgb40t65rqdn-d.pdf AFGB40T65RQDN
Produkt ist nicht verfügbar
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AFGB40T65RQDN Hersteller : ONSEMI afgb40t65rqdn-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
Produkt ist nicht verfügbar
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