AFGBP40T120SWD ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - AFGBP40T120SWD - IGBT, 80 A, 1.33 V, 681 W, 1.2 kV, BPAK, 7 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.33V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 681W
Bauform - Transistor: BPAK
Dauerkollektorstrom: 80A
Anzahl der Pins: 7Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details AFGBP40T120SWD ONSEMI
Description: FS7 1200V 40A NSCR IGBT BPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 330 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A, Supplier Device Package: T2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 48ns/258ns, Switching Energy: 5.34mJ (on), 3mJ (off), Test Condition: 800V, 40A, 10Ohm, 15V, Gate Charge: 155 nC, Grade: Automotive, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 681 W, Qualification: AEC-Q101.
Weitere Produktangebote AFGBP40T120SWD nach Preis ab 6.23 EUR bis 10.08 EUR
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| AFGBP40T120SWD | Hersteller : onsemi |
Description: FS7 1200V 40A NSCR IGBT BPAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: T2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/258ns Switching Energy: 5.34mJ (on), 3mJ (off) Test Condition: 800V, 40A, 10Ohm, 15V Gate Charge: 155 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 681 W Qualification: AEC-Q101 |
auf Bestellung 1580 Stücke: Lieferzeit 10-14 Tag (e) |
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| AFGBP40T120SWD | Hersteller : onsemi |
Description: FS7 1200V 40A NSCR IGBT BPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: T2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/258ns Switching Energy: 5.34mJ (on), 3mJ (off) Test Condition: 800V, 40A, 10Ohm, 15V Gate Charge: 155 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 681 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AFGBP40T120SWD | Hersteller : onsemi |
IGBTs FS7 1200V 40A NSCR IGBT BPAK |
Produkt ist nicht verfügbar |