
AFGH4L25T120RWD onsemi

Description: IGBT FS 1200V 50A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Reverse Recovery Time (trr): 174 ns
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Gate Charge: 113 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.71V @ 15V, 25A
Td (on/off) @ 25°C: 43ns/203ns
Switching Energy: 1.46mJ (on), 1.07mJ (off)
Test Condition: 600V, 25A, 8Ohm, 15V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 11.70 EUR |
10+ | 8.02 EUR |
450+ | 6.61 EUR |
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Technische Details AFGH4L25T120RWD onsemi
Description: IGBT FS 1200V 50A TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Reverse Recovery Time (trr): 174 ns, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Gate Charge: 113 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 357 W, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.71V @ 15V, 25A, Td (on/off) @ 25°C: 43ns/203ns, Switching Energy: 1.46mJ (on), 1.07mJ (off), Test Condition: 600V, 25A, 8Ohm, 15V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AFGH4L25T120RWD nach Preis ab 7.46 EUR bis 13.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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AFGH4L25T120RWD | Hersteller : onsemi |
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auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGH4L25T120RWD | Hersteller : ON Semiconductor |
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