
AFGH4L40T120RWD onsemi

Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 182 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53.5ns/311ns
Switching Energy: 3.38mJ (on), 1.7mJ (off)
Test Condition: 600V, 20A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 576 W
Qualification: AEC-Q101
auf Bestellung 1274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 17 EUR |
10+ | 11.78 EUR |
450+ | 8.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AFGH4L40T120RWD onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 182 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 53.5ns/311ns, Switching Energy: 3.38mJ (on), 1.7mJ (off), Test Condition: 600V, 20A, 6Ohm, 15V, Gate Charge: 171 nC, Grade: Automotive, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 576 W, Qualification: AEC-Q101.
Weitere Produktangebote AFGH4L40T120RWD nach Preis ab 9.72 EUR bis 17.9 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AFGH4L40T120RWD | Hersteller : onsemi |
![]() |
auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
AFGH4L40T120RWD | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |