AFGHL50T65RQDN onsemi
Hersteller: onsemiDescription: IGBT FIELD STOP 650V 78A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 41ns/76ns
Switching Energy: 3.09mJ (on), 830µJ (off)
Test Condition: 400V, 50A, 2.5Ohm, 15V
Gate Charge: 65 nC
Grade: Automotive
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 346 W
Qualification: AEC-Q101
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.57 EUR |
| 30+ | 7.58 EUR |
| 120+ | 6.5 EUR |
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Technische Details AFGHL50T65RQDN onsemi
Description: IGBT FIELD STOP 650V 78A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 57 ns, Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 41ns/76ns, Switching Energy: 3.09mJ (on), 830µJ (off), Test Condition: 400V, 50A, 2.5Ohm, 15V, Gate Charge: 65 nC, Grade: Automotive, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 346 W, Qualification: AEC-Q101.
Weitere Produktangebote AFGHL50T65RQDN nach Preis ab 4.98 EUR bis 9.63 EUR
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AFGHL50T65RQDN | Hersteller : onsemi |
IGBT Transistors 650V/50A FS4 SCR IGBT T0247-3L AUTOMOTIVE |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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