| Anzahl | Privatkunde |
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| 10+ | 8.9 EUR |
| 120+ | 7.19 EUR |
| 510+ | 5.71 EUR |
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Technische Details AFGHL50T65RQDN onsemi
Description: IGBT FIELD STOP 650V 78A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 57 ns, Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 41ns/76ns, Switching Energy: 3.09mJ (on), 830µJ (off), Test Condition: 400V, 50A, 2.5Ohm, 15V, Gate Charge: 65 nC, Grade: Automotive, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 346 W, Qualification: AEC-Q101.
Weitere Produktangebote AFGHL50T65RQDN
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AFGHL50T65RQDN | onsemi |
 Description: IGBT FIELD STOP 650V 78A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 57 ns Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 41ns/76ns Switching Energy: 3.09mJ (on), 830µJ (off) Test Condition: 400V, 50A, 2.5Ohm, 15V Gate Charge: 65 nC Grade: Automotive Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 346 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AFGHL50T65RQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 173W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 65nC Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AFGHL50T65RQDN |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 41ns/76ns
Switching Energy: 3.09mJ (on), 830µJ (off)
Test Condition: 400V, 50A, 2.5Ohm, 15V
Gate Charge: 65 nC
Grade: Automotive
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 346 W
Qualification: AEC-Q101
Description: IGBT FIELD STOP 650V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 41ns/76ns
Switching Energy: 3.09mJ (on), 830µJ (off)
Test Condition: 400V, 50A, 2.5Ohm, 15V
Gate Charge: 65 nC
Grade: Automotive
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 346 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65RQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Application: automotive industry
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH