Technische Details AG533EES4FRATCB Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: HPLF5060T5LSAH, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote AG533EES4FRATCB nach Preis ab 1.04 EUR bis 3.8 EUR
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AG533EES4FRATCB | ROHM Semiconductor |
 MOSFETs MOSFETs, Pch -30V -35A, HPLF5060T5LSAH, Power MOSFET for Automotive |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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AG533EES4FRATCB | Rohm Semiconductor |
Description: PCH -30V -35A, HPLF5060T5LSAH, P Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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| AG533EES4FRATCB |
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Hersteller: ROHM Semiconductor
MOSFETs MOSFETs, Pch -30V -35A, HPLF5060T5LSAH, Power MOSFET for Automotive
MOSFETs MOSFETs, Pch -30V -35A, HPLF5060T5LSAH, Power MOSFET for Automotive
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.72 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |
| 3000+ | 1.04 EUR |
| AG533EES4FRATCB |
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Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 10+ | 2.42 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |