AIDK12S65C5ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.9 EUR |
| 10+ | 6.16 EUR |
| 100+ | 5.44 EUR |
| 250+ | 5.4 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.56 EUR |
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Technische Details AIDK12S65C5ATMA1 Infineon Technologies
Description: DISCRETE DIODES, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 70 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO263-2, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 363pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote AIDK12S65C5ATMA1 nach Preis ab 5.63 EUR bis 9.33 EUR
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AIDK12S65C5ATMA1 | Infineon Technologies |
 Description: DISCRETE DIODESQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 70 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO263-2 Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 363pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIDK12S65C5ATMA1 |
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Hersteller: Infineon Technologies
Description: DISCRETE DIODES
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DISCRETE DIODES
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.33 EUR |
| 10+ | 7.83 EUR |
| 100+ | 6.34 EUR |
| 500+ | 5.63 EUR |