AIDW10S65C5XKSA1 Infineon Technologies
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.23 EUR |
| 10+ | 6.51 EUR |
| 25+ | 6.16 EUR |
| 100+ | 5.33 EUR |
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Technische Details AIDW10S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 303pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q100/101.
Weitere Produktangebote AIDW10S65C5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| AIDW10S65C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 AIDW10S65C5XKSA1 THT Schottky diodes |
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AIDW10S65C5XKSA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 303pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q100/101 |
Produkt ist nicht verfügbar |