AIDW10S65C5XKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 10A TO247-3, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 303pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Qualification: AEC-Q100/101.