AIGW50N65F5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.95 EUR |
30+ | 12.93 EUR |
120+ | 11.56 EUR |
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Technische Details AIGW50N65F5XKSA1 Infineon Technologies
Description: IGBT 650V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench, Td (on/off) @ 25°C: 21ns/156ns, Switching Energy: 490µJ (on), 140µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 1018 nC, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIGW50N65F5XKSA1 nach Preis ab 10.27 EUR bis 19.03 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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AIGW50N65F5XKSA1 | Hersteller : Infineon Technologies | IGBT Transistors DISCRETES |
auf Bestellung 241 Stücke: Lieferzeit 14-28 Tag (e) |
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AIGW50N65F5XKSA1 | Hersteller : Infineon Technologies | High Speed Fast IGBT Chip |
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AIGW50N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AIGW50N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns |
Produkt ist nicht verfügbar |