
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 10.17 EUR |
10+ | 9.43 EUR |
25+ | 6.35 EUR |
240+ | 5.28 EUR |
480+ | 4.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AIGW50N65F5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V TO247-3-41, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench, Td (on/off) @ 25°C: 21ns/156ns, Switching Energy: 490µJ (on), 140µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 1018 nC, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIGW50N65F5XKSA1 nach Preis ab 10.77 EUR bis 10.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
---|---|---|---|---|---|---|---|---|---|
![]() |
AIGW50N65F5XKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/156ns Switching Energy: 490µJ (on), 140µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 1018 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
![]() |
AIGW50N65F5XKSA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||
![]() |
AIGW50N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Technology: TRENCHSTOP™ 5 Turn-on time: 33ns Turn-off time: 162ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||
![]() |
AIGW50N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Technology: TRENCHSTOP™ 5 Turn-on time: 33ns Turn-off time: 162ns |
Produkt ist nicht verfügbar |