AIHD06N60RATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesIGBT with integrated diode in packages offering space Saving advantage
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Technische Details AIHD06N60RATMA1 Infineon Technologies
Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/127ns, Switching Energy: 110µJ (on), 220µJ (off), Test Condition: 400V, 6A, 23Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 100 W.
Weitere Produktangebote AIHD06N60RATMA1
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| AIHD06N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES | AIHD06N60RATMA1 SMD IGBT transistors |
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AIHD06N60RATMA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/127ns Switching Energy: 110µJ (on), 220µJ (off) Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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AIHD06N60RATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors DISCRETES |
Produkt ist nicht verfügbar |