AIHD06N60RATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesIGBT with integrated diode in packages offering space Saving advantage
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details AIHD06N60RATMA1 Infineon Technologies
Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/127ns, Switching Energy: 110µJ (on), 220µJ (off), Test Condition: 400V, 6A, 23Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 100 W.
Weitere Produktangebote AIHD06N60RATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
AIHD06N60RATMA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/127ns Switching Energy: 110µJ (on), 220µJ (off) Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
|
 |
AIHD06N60RATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors DISCRETES |
Produkt ist nicht verfügbar |
|
 |
AIHD06N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Mounting: SMD Case: DPAK Collector current: 6A Pulsed collector current: 18A Gate-emitter voltage: ±20V Power dissipation: 100W Type of transistor: IGBT Collector-emitter voltage: 600V Kind of package: reel; tape Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Turn-on time: 19ns Gate charge: 48nC Turn-off time: 279ns |
Produkt ist nicht verfügbar |