Technische Details AIHD06N60RFATMA1 Infineon Technologies
Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 8ns/105ns, Switching Energy: 90µJ (on), 90µJ (off), Test Condition: 400V, 6A, 23Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 100 W.
Weitere Produktangebote AIHD06N60RFATMA1
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AIHD06N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 100W; DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 100W Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 48nC Technology: TRENCHSTOP™ Case: DPAK Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 18A Turn-on time: 16ns Turn-off time: 127ns Type of transistor: IGBT Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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AIHD06N60RFATMA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 8ns/105ns Switching Energy: 90µJ (on), 90µJ (off) Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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AIHD06N60RFATMA1 | Hersteller : Infineon Technologies |
 IGBT Transistors DISCRETES |
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AIHD06N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 100W; DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 100W Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 48nC Technology: TRENCHSTOP™ Case: DPAK Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 18A Turn-on time: 16ns Turn-off time: 127ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |