AIHD10N60RATMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 2500 Stücke
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Technische Details AIHD10N60RATMA1 INFINEON TECHNOLOGIES
Category: SMD IGBT transistors, Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK, Type of transistor: IGBT, Power dissipation: 150W, Case: DPAK, Mounting: SMD, Gate charge: 64nC, Kind of package: reel; tape, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Technology: TRENCHSTOP™ RC, Gate-emitter voltage: ±20V, Collector current: 10A, Pulsed collector current: 30A, Turn-on time: 24ns, Turn-off time: 331ns, Collector-emitter voltage: 600V, Anzahl je Verpackung: 2500 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| AIHD10N60RATMA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 |
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AIHD10N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Turn-on time: 24ns Turn-off time: 331ns Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |