AIKBE50N65RF5ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.38 EUR |
| 10+ | 9.86 EUR |
| 100+ | 7.92 EUR |
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Technische Details AIKBE50N65RF5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO263-7-U04, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16.8ns/136ns, Switching Energy: 120µJ (on), 90µJ (off), Test Condition: 400V, 25A, 9Ohm, 15V, Gate Charge: 108 nC, Grade: Automotive, Current - Collector (Ic) (Max): 96 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 326 W, Qualification: AEC-Q101.
Weitere Produktangebote AIKBE50N65RF5ATMA1 nach Preis ab 7.3 EUR bis 15.56 EUR
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AIKBE50N65RF5ATMA1 | Hersteller : Infineon Technologies |
IGBTs SIC_DISCRETE |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKBE50N65RF5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - AIKBE50N65RF5ATMA1 - IGBT, 96 A, 1.66 V, 326 W, 650 V, TO-263HV, 7 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.66V usEccn: EAR99 euEccn: NLR Verlustleistung: 326W Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: TRENCHSTOP 5 CoolSiC Gen V Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 96A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIKBE50N65RF5ATMA1 | Hersteller : Infineon Technologies |
SIC_DISCRETE |
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AIKBE50N65RF5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 96A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-7-U04 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.8ns/136ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 400V, 25A, 9Ohm, 15V Gate Charge: 108 nC Grade: Automotive Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |