AIKW30N60CTXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.1 EUR |
| 10+ | 6.97 EUR |
| 30+ | 6.35 EUR |
| 120+ | 5.79 EUR |
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Technische Details AIKW30N60CTXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/254ns, Switching Energy: 690µJ (on), 770µJ (off), Test Condition: 400V, 30A, 10.6Ohm, 15V, Gate Charge: 167 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 187 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIKW30N60CTXKSA1 nach Preis ab 5.26 EUR bis 9.35 EUR
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AIKW30N60CTXKSA1 | Hersteller : Infineon Technologies |
IGBTs DISCRETES |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW30N60CTXKSA1 | Hersteller : INFINEON |
Description: INFINEON - AIKW30N60CTXKSA1 - IGBT, 60 A, 1.5 V, 187 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 187W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 333 Stücke: Lieferzeit 14-21 Tag (e) |
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AIKW30N60CTXKSA1 | Hersteller : Infineon Technologies |
IGBT Chip with Fast Recovery Emitter Controlled Diode |
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AIKW30N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 187W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 167nC Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 90A Turn-on time: 44ns Turn-off time: 0.3µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AIKW30N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 187W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 167nC Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 90A Turn-on time: 44ns Turn-off time: 0.3µs |
Produkt ist nicht verfügbar |