AIMBG120R010M1XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SICFET N-CH 1200V 205A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 882W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 60.42 EUR |
| 10+ | 50.03 EUR |
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Technische Details AIMBG120R010M1XTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 205A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 205A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V, Power Dissipation (Max): 882W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 30mA, Supplier Device Package: PG-TO263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMBG120R010M1XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AIMBG120R010M1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - AIMBG120R010M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 205 A, 1.2 kV, 0.0087 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 205A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 882W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Trench Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0087ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMBG120R010M1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - AIMBG120R010M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 205 A, 1.2 kV, 0.0087 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 205A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 882W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Trench Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0087ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMBG120R010M1XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 205A 8-Pin(7+Tab) TO-263 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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AIMBG120R010M1XTMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 1200V 205A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 205A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V Power Dissipation (Max): 882W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 30mA Supplier Device Package: PG-TO263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| AIMBG120R010M1XTMA1 | Hersteller : Infineon Technologies |
MOSFET |
Produkt ist nicht verfügbar |