| Anzahl | Preis |
|---|---|
| 1+ | 28.86 EUR |
| 10+ | 24.06 EUR |
| 100+ | 20.8 EUR |
| 500+ | 19.69 EUR |
| 1000+ | 18.39 EUR |
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Technische Details AIMBG120R020M1XTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 104A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V, Power Dissipation (Max): 468W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 15mA, Supplier Device Package: PG-TO263-7-12, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMBG120R020M1XTMA1 nach Preis ab 19.7 EUR bis 28.88 EUR
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AIMBG120R020M1XTMA1 | Infineon Technologies |
 Description: SICFET N-CH 1200V 104A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Power Dissipation (Max): 468W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 15mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 835 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMBG120R020M1XTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 104A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 15mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 104A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 15mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.88 EUR |
| 10+ | 20.62 EUR |
| 100+ | 19.7 EUR |