Produkte > INFINEON TECHNOLOGIES > AIMBG120R060M1XTMA1
AIMBG120R060M1XTMA1

AIMBG120R060M1XTMA1 Infineon Technologies

448_AIMBG120R.pdf Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.75 EUR
10+13.72 EUR
100+12.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AIMBG120R060M1XTMA1 Infineon Technologies

Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 4.3mA, Supplier Device Package: PG-TO263-7-12, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V, Qualification: AEC-Q101.

Weitere Produktangebote AIMBG120R060M1XTMA1 nach Preis ab 16.32 EUR bis 22.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AIMBG120R060M1XTMA1 AIMBG120R060M1XTMA1 Hersteller : Infineon Technologies Infineon_AIMBG120R060M1_DataSheet_v01_10_EN-3360572.pdf MOSFET SIC_DISCRETE
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.86 EUR
10+20.15 EUR
25+19.61 EUR
50+18.52 EUR
100+17.42 EUR
250+16.88 EUR
500+16.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R060M1XTMA1 AIMBG120R060M1XTMA1 Hersteller : Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH