AIMBG75R025M2HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 22.65 EUR |
| 10+ | 15.84 EUR |
| 100+ | 13.13 EUR |
| 500+ | 12.67 EUR |
| 1000+ | 11.6 EUR |
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Technische Details AIMBG75R025M2HXTMA1 Infineon Technologies
Description: AIMBG75R025M2HXTMA1, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Grade: Automotive, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.6V @ 8.1mA, Power Dissipation (Max): 234W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote AIMBG75R025M2HXTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AIMBG75R025M2HXTMA1 | Infineon Technologies |
Description: AIMBG75R025M2HXTMA1 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Grade: Automotive Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 8.1mA Power Dissipation (Max): 234W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AIMBG75R025M2HXTMA1 | Infineon Technologies |
Description: AIMBG75R025M2HXTMA1 Vgs(th) (Max) @ Id: 5.6V @ 8.1mA Power Dissipation (Max): 234W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Grade: Automotive Supplier Device Package: PG-TO263-7-12 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AIMBG75R025M2HXTMA1 |
Hersteller: Infineon Technologies
Description: AIMBG75R025M2HXTMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: AIMBG75R025M2HXTMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIMBG75R025M2HXTMA1 |
Hersteller: Infineon Technologies
Description: AIMBG75R025M2HXTMA1
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7-12
Packaging: Cut Tape (CT)
Description: AIMBG75R025M2HXTMA1
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7-12
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH