AIMBG75R025M2HXTMA1 Infineon Technologies
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.83 EUR |
| 100+ | 12.41 EUR |
| 1000+ | 10.54 EUR |
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Technische Details AIMBG75R025M2HXTMA1 Infineon Technologies
Description: AIMBG75R025M2HXTMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 8.1mA, Supplier Device Package: PG-TO263-7-12, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMBG75R025M2HXTMA1
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AIMBG75R025M2HXTMA1 | Hersteller : Infineon Technologies |
Description: AIMBG75R025M2HXTMA1 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.1mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AIMBG75R025M2HXTMA1 | Hersteller : Infineon Technologies |
Description: AIMBG75R025M2HXTMA1 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.1mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |