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AIMBG75R060M1HXTMA1

AIMBG75R060M1HXTMA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: AIMBG75R060M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+7.12 EUR
2000+6.97 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AIMBG75R060M1HXTMA1 Infineon Technologies

Description: AIMBG75R060M1HXTMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tj), Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 4mA, Supplier Device Package: PG-TO263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V, Qualification: AEC-Q101.

Weitere Produktangebote AIMBG75R060M1HXTMA1 nach Preis ab 7.30 EUR bis 14.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AIMBG75R060M1HXTMA1 AIMBG75R060M1HXTMA1 Hersteller : Infineon Technologies Description: AIMBG75R060M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.09 EUR
10+9.33 EUR
25+8.64 EUR
100+7.88 EUR
250+7.51 EUR
500+7.30 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG75R060M1HXTMA1 AIMBG75R060M1HXTMA1 Hersteller : Infineon Technologies Infineon_AIMBG75R060M1H_DataSheet_v02_00_EN-3445904.pdf SiC MOSFETs AUTOMOTIVE_SICMOS
auf Bestellung 934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.13 EUR
10+12.11 EUR
25+10.98 EUR
100+10.08 EUR
250+9.49 EUR
500+9.12 EUR
1000+7.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH