AIMBG75R140M1HXTMA1 Infineon Technologies
auf Bestellung 882 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.66 EUR |
| 10+ | 5.77 EUR |
| 100+ | 4.15 EUR |
| 500+ | 4.05 EUR |
| 1000+ | 3.43 EUR |
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Technische Details AIMBG75R140M1HXTMA1 Infineon Technologies
Description: SICFET N-CH 750V 17A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 1.7mA, Supplier Device Package: PG-TO263-7-12, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMBG75R140M1HXTMA1 nach Preis ab 4.06 EUR bis 8.66 EUR
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AIMBG75R140M1HXTMA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 750V 17A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMBG75R140M1HXTMA1 | Hersteller : INFINEON |
Description: INFINEON - AIMBG75R140M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 17 A, 750 V, 0.182 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.182ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMBG75R140M1HXTMA1 | Hersteller : INFINEON |
Description: INFINEON - AIMBG75R140M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 17 A, 750 V, 0.182 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.182ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMBG75R140M1HXTMA1 | Hersteller : Infineon Technologies |
AUTOMOTIVE_SICMOS |
Produkt ist nicht verfügbar |
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AIMBG75R140M1HXTMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 750V 17A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |