AIMCQ120R020M1TXTMA1 Infineon Technologies
auf Bestellung 1279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.07 EUR |
| 10+ | 32.95 EUR |
| 100+ | 28.81 EUR |
| 250+ | 26.89 EUR |
| 500+ | 24.73 EUR |
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Technische Details AIMCQ120R020M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V, Power Dissipation (Max): 577W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 13.7mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMCQ120R020M1TXTMA1 nach Preis ab 28.54 EUR bis 37.08 EUR
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AIMCQ120R020M1TXTMA1 | Hersteller : Infineon Technologies |
 Description: SIC_DISCRETEPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Power Dissipation (Max): 577W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMCQ120R020M1TXTMA1 | Hersteller : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Power Dissipation (Max): 577W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Qualification: AEC-Q101 |
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