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AIMCQ120R020M1TXTMA1

AIMCQ120R020M1TXTMA1 Infineon Technologies


Infineon_AIMCQ120R020M1T_DataSheet_v01_00_EN-3498710.pdf Hersteller: Infineon Technologies
SiC MOSFETs SIC_DISCRETE
auf Bestellung 1279 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.07 EUR
10+32.95 EUR
100+28.81 EUR
250+26.89 EUR
500+24.73 EUR
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Technische Details AIMCQ120R020M1TXTMA1 Infineon Technologies

Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V, Power Dissipation (Max): 577W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 13.7mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V, Qualification: AEC-Q101.

Weitere Produktangebote AIMCQ120R020M1TXTMA1 nach Preis ab 28.54 EUR bis 37.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AIMCQ120R020M1TXTMA1 AIMCQ120R020M1TXTMA1 Hersteller : Infineon Technologies Infineon-AIMCQ120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6397a6b18 Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.08 EUR
10+28.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIMCQ120R020M1TXTMA1 AIMCQ120R020M1TXTMA1 Hersteller : Infineon Technologies Infineon-AIMCQ120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6397a6b18 Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH