AIMCQ120R030M1TXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 750+ | 13.22 EUR |
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Technische Details AIMCQ120R030M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 8.6mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMCQ120R030M1TXTMA1 nach Preis ab 15.8 EUR bis 24.82 EUR
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AIMCQ120R030M1TXTMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs SIC_DISCRETE |
auf Bestellung 3749 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMCQ120R030M1TXTMA1 | Hersteller : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1791 Stücke: Lieferzeit 10-14 Tag (e) |
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