AIMCQ120R060M1TXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesSiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.78 EUR |
| 10+ | 16.10 EUR |
| 100+ | 13.41 EUR |
| 250+ | 12.62 EUR |
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Technische Details AIMCQ120R060M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V, Power Dissipation (Max): 259W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 4.3mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V, Qualification: AEC-Q101.
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AIMCQ120R060M1TXTMA1 | Hersteller : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Qualification: AEC-Q101 |
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AIMCQ120R060M1TXTMA1 | Hersteller : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |