AIMDQ75R007M2HXTMA1 Infineon Technologies
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.34 EUR |
| 10+ | 42.84 EUR |
| 100+ | 37.84 EUR |
| 500+ | 37.66 EUR |
| 750+ | 37.59 EUR |
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Technische Details AIMDQ75R007M2HXTMA1 Infineon Technologies
Description: AIMDQ75R007M2HXTMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V, Power Dissipation (Max): 789W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 27.7mA, Supplier Device Package: PG-HDSOP-22-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 840 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMDQ75R007M2HXTMA1 nach Preis ab 38.85 EUR bis 52.78 EUR
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AIMDQ75R007M2HXTMA1 | Hersteller : Infineon Technologies |
 Description: AIMDQ75R007M2HXTMA1Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 27.7mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 840 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMDQ75R007M2HXTMA1 | Hersteller : Infineon Technologies |
Description: AIMDQ75R007M2HXTMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 27.7mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 840 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V Qualification: AEC-Q101 |
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