AIMDQ75R016M1HXUMA1 Infineon Technologies
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.96 EUR |
| 10+ | 22.84 EUR |
| 100+ | 19.78 EUR |
| 500+ | 19.43 EUR |
| 750+ | 18.55 EUR |
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Technische Details AIMDQ75R016M1HXUMA1 Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V, Power Dissipation (Max): 384W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 14.9mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 0V, 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMDQ75R016M1HXUMA1 nach Preis ab 20.75 EUR bis 33.9 EUR
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AIMDQ75R016M1HXUMA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 750V PG-HDSOP-22Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Power Dissipation (Max): 384W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 0V, 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMDQ75R016M1HXUMA1 | Hersteller : INFINEON |
Description: INFINEON - AIMDQ75R016M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 98 A, 750 V, 0.022 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 384W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMDQ75R016M1HXUMA1 | Hersteller : INFINEON |
Description: INFINEON - AIMDQ75R016M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 98 A, 750 V, 0.022 ohm, HDSOP Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V euEccn: NLR Verlustleistung: 384W Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: No Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMDQ75R016M1HXUMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Power Dissipation (Max): 384W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 0V, 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |