AIMDQ75R016M1HXUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 33.19 EUR |
| 10+ | 23.81 EUR |
| 100+ | 21.82 EUR |
| 500+ | 20.94 EUR |
| 750+ | 19.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AIMDQ75R016M1HXUMA1 Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 0V, 18V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.6V @ 14.9mA, Power Dissipation (Max): 384W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote AIMDQ75R016M1HXUMA1 nach Preis ab 20.75 EUR bis 33.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AIMDQ75R016M1HXUMA1 | Infineon Technologies |
 Description: SICFET N-CH 750V PG-HDSOP-22Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 0V, 18V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Power Dissipation (Max): 384W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V |
auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AIMDQ75R016M1HXUMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Description: SICFET N-CH 750V PG-HDSOP-22
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.9 EUR |
| 10+ | 24.28 EUR |
| 100+ | 20.75 EUR |