AIMW120R035M1HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: 1200V COOLSIC MOSFET PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 56.51 EUR |
| 30+ | 38.07 EUR |
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Technische Details AIMW120R035M1HXKSA1 Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V, Power Dissipation (Max): 228W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 10mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIMW120R035M1HXKSA1 nach Preis ab 46.31 EUR bis 57.92 EUR
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AIMW120R035M1HXKSA1 | Hersteller : Infineon Technologies |
SiC MOSFETs Y |
auf Bestellung 233 Stücke: Lieferzeit 283-287 Tag (e) |
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AIMW120R035M1HXKSA1 | Hersteller : INFINEON |
Description: INFINEON - AIMW120R035M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 1.2 kV, 0.035 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 228mW Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolSiC Trench productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |