AIMW120R035M1HXKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 69.41 EUR |
| 10+ | 48.69 EUR |
| 100+ | 46.71 EUR |
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Technische Details AIMW120R035M1HXKSA1 Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V, Power Dissipation (Max): 228W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 10mA, Supplier Device Package: PG-TO247-3-41, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMW120R035M1HXKSA1 nach Preis ab 43.03 EUR bis 79.22 EUR
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AIMW120R035M1HXKSA1 | Infineon Technologies |
 Description: 1200V COOLSIC MOSFET PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V Power Dissipation (Max): 228W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 10mA Supplier Device Package: PG-TO247-3-41 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMW120R035M1HXKSA1 | INFINEON |
Description: INFINEON - AIMW120R035M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 1.2 kV, 0.035 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 228mW Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolSiC Trench productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMW120R035M1HXKSA1 |
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Hersteller: Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V COOLSIC MOSFET PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 73.52 EUR |
| 30+ | 48.49 EUR |
| 120+ | 43.03 EUR |
| AIMW120R035M1HXKSA1 |
|
Hersteller: INFINEON
Description: INFINEON - AIMW120R035M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 1.2 kV, 0.035 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 228mW
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolSiC Trench
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - AIMW120R035M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 1.2 kV, 0.035 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 228mW
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolSiC Trench
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 79.22 EUR |
| 5+ | 64 EUR |
| 10+ | 50.23 EUR |
| 50+ | 50.21 EUR |
| 100+ | 45.43 EUR |