auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 35.94 EUR |
| 10+ | 30.17 EUR |
| 25+ | 27.21 EUR |
| 50+ | 27.1 EUR |
| 100+ | 26.22 EUR |
| 240+ | 24.53 EUR |
| 480+ | 23.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AIMW120R045M1XKSA1 Infineon Technologies
Description: SICFET N-CH 1200V 52A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V, Power Dissipation (Max): 228W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 10mA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Part Status: Active, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMW120R045M1XKSA1 nach Preis ab 38.35 EUR bis 49.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AIMW120R045M1XKSA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 1200V 52A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V Power Dissipation (Max): 228W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 10mA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
AIMW120R045M1XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 52A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||
 |
AIMW120R045M1XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 75mΩ Drain current: 36A Drain-source voltage: 1.2kV Power dissipation: 114W Technology: CoolSiC™; SiC Case: TO247 Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 130A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
AIMW120R045M1XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 75mΩ Drain current: 36A Drain-source voltage: 1.2kV Power dissipation: 114W Technology: CoolSiC™; SiC Case: TO247 Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 130A Polarisation: unipolar |
Produkt ist nicht verfügbar |