auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.39 EUR |
| 10+ | 46.36 EUR |
| 25+ | 40.92 EUR |
| 50+ | 40.09 EUR |
| 100+ | 38.37 EUR |
| 240+ | 37.42 EUR |
| 480+ | 34.44 EUR |
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Technische Details AIMW120R060M1HXKSA1 Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 5.6mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIMW120R060M1HXKSA1 nach Preis ab 29.99 EUR bis 46.76 EUR
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AIMW120R060M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: 1200V COOLSIC MOSFET PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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