auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.74 EUR |
| 10+ | 21.74 EUR |
| 25+ | 19.24 EUR |
| 50+ | 19.22 EUR |
| 100+ | 18.09 EUR |
| 480+ | 15.03 EUR |
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Technische Details AIMW120R080M1XKSA1 Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 13A, 15V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 5.6mA, Supplier Device Package: PG-TO247-3-41, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMW120R080M1XKSA1 nach Preis ab 14.35 EUR bis 26.07 EUR
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AIMW120R080M1XKSA1 | Hersteller : Infineon Technologies |
 Description: 1200V COOLSIC MOSFET PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 13A, 15V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO247-3-41 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMW120R080M1XKSA1 | Hersteller : INFINEON |
Description: INFINEON - AIMW120R080M1XKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 33 A, 1.2 kV, 0.08 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolSiC Trench productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMW120R080M1XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 74A; 75W; TO247 Mounting: THT Kind of package: tube Polarisation: unipolar Gate-source voltage: -7...20V On-state resistance: 135mΩ Drain current: 24A Pulsed drain current: 74A Power dissipation: 75W Drain-source voltage: 1.2kV Technology: CoolSiC™; SiC Kind of channel: enhancement Case: TO247 Type of transistor: N-MOSFET |
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