AIMZA75R008M1HXKSA1 Infineon Technologies
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.12 EUR |
| 10+ | 37.05 EUR |
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Technische Details AIMZA75R008M1HXKSA1 Infineon Technologies
Description: AUTOMOTIVE_SICMOS, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 163A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 32.4mA, Supplier Device Package: PG-TO247-4-U02, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZA75R008M1HXKSA1 nach Preis ab 35.78 EUR bis 54.37 EUR
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AIMZA75R008M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: AUTOMOTIVE_SICMOSPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 32.4mA Supplier Device Package: PG-TO247-4-U02 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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