AIMZA75R016M1HXKSA1 Infineon Technologies
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.58 EUR |
| 10+ | 32.47 EUR |
| 25+ | 21.67 EUR |
| 100+ | 20.68 EUR |
| 240+ | 20.56 EUR |
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Technische Details AIMZA75R016M1HXKSA1 Infineon Technologies
Description: IGBT, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tj), Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20V, Power Dissipation (Max): 319W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 14.9mA, Supplier Device Package: PG-TO247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZA75R016M1HXKSA1 nach Preis ab 31.78 EUR bis 40.88 EUR
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AIMZA75R016M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: IGBTPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tj) Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Supplier Device Package: PG-TO247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMZA75R016M1HXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 750V 89A Tube |
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