AIMZA75R016M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details AIMZA75R016M1HXKSA1 Infineon Technologies
Description: SICFET N-CH 750V 89A PG-TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V, Power Dissipation (Max): 319W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 14.9mA, Supplier Device Package: PG-TO247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZA75R016M1HXKSA1 nach Preis ab 18.11 EUR bis 35.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AIMZA75R016M1HXKSA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
AIMZA75R016M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 750V 89A PG-TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Supplier Device Package: PG-TO247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
AIMZA75R016M1HXKSA1 | Infineon Technologies |
SiC MOSFETs AUTOMOTIVE_SICMOS |
auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| AIMZA75R016M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 750V Drain current: 89A Power dissipation: 319W Case: TO247-4 Gate-source voltage: -5...23V On-state resistance: 15mΩ Mounting: THT Gate charge: 81nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
|
| AIMZA75R016M1HXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 25.9 EUR |
| AIMZA75R016M1HXKSA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 89A PG-TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V 89A PG-TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.64 EUR |
| 30+ | 19.69 EUR |
| 120+ | 18.11 EUR |
| AIMZA75R016M1HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs AUTOMOTIVE_SICMOS
SiC MOSFETs AUTOMOTIVE_SICMOS
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 35.52 EUR |
| 10+ | 22.62 EUR |
| 100+ | 21.88 EUR |
| AIMZA75R016M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 240+ | 21.28 EUR |