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AIMZA75R016M1HXKSA1

AIMZA75R016M1HXKSA1 Infineon Technologies


Infineon_AIMZA75R016M1H_DataSheet_v02_00_EN-3401804.pdf Hersteller: Infineon Technologies
SiC MOSFETs AUTOMOTIVE_SICMOS
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Technische Details AIMZA75R016M1HXKSA1 Infineon Technologies

Description: IGBT, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tj), Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20V, Power Dissipation (Max): 319W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 14.9mA, Supplier Device Package: PG-TO247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V, Qualification: AEC-Q101.

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AIMZA75R016M1HXKSA1 AIMZA75R016M1HXKSA1 Hersteller : Infineon Technologies Infineon-AIMZA75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018da7d8a6134195 Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tj)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.88 EUR
30+33.89 EUR
120+31.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIMZA75R016M1HXKSA1 Hersteller : Infineon Technologies infineon-aimza75r016m1h-datasheet-v02_00-en.pdf Trans MOSFET N-CH SiC 750V 89A Tube
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