AIMZA75R016M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
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Technische Details AIMZA75R016M1HXKSA1 Infineon Technologies
Description: INFINEON - AIMZA75R016M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 89 A, 750 V, 0.015 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 750V, rohsCompliant: YES, Dauer-Drainstrom Id: 89A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 319W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: CoolSiC Gen 1 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.015ohm, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote AIMZA75R016M1HXKSA1 nach Preis ab 21.55 EUR bis 50.23 EUR
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AIMZA75R016M1HXKSA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMZA75R016M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 750V 89A PG-TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Supplier Device Package: PG-TO247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R016M1HXKSA1 | Infineon Technologies |
SiC MOSFETs AUTOMOTIVE_SICMOS |
auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R016M1HXKSA1 | INFINEON |
Description: INFINEON - AIMZA75R016M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 89 A, 750 V, 0.015 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 89A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 319W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: CoolSiC Gen 1 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMZA75R016M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 750V Drain current: 89A Power dissipation: 319W Case: TO247-4 Gate-source voltage: -5...23V On-state resistance: 15mΩ Mounting: THT Gate charge: 81nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMZA75R016M1HXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 750V 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 30.82 EUR |
| AIMZA75R016M1HXKSA1 |
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Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 89A PG-TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V 89A PG-TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.65 EUR |
| 30+ | 23.43 EUR |
| 120+ | 21.55 EUR |
| AIMZA75R016M1HXKSA1 |
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Hersteller: Infineon Technologies
SiC MOSFETs AUTOMOTIVE_SICMOS
SiC MOSFETs AUTOMOTIVE_SICMOS
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 42.27 EUR |
| 10+ | 26.92 EUR |
| 100+ | 26.04 EUR |
| AIMZA75R016M1HXKSA1 |
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Hersteller: INFINEON
Description: INFINEON - AIMZA75R016M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 89 A, 750 V, 0.015 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 89A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 319W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolSiC Gen 1 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.015ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - AIMZA75R016M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 89 A, 750 V, 0.015 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 89A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 319W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolSiC Gen 1 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.015ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.23 EUR |
| 6+ | 45.9 EUR |
| 10+ | 41.69 EUR |
| 50+ | 28.19 EUR |
| 100+ | 27.85 EUR |
| AIMZA75R016M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 25.32 EUR |