AIMZA75R140M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 750V 16A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
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Technische Details AIMZA75R140M1HXKSA1 Infineon Technologies
Description: IGBT, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tj), Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 1.7mA, Supplier Device Package: PG-TO247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZA75R140M1HXKSA1 nach Preis ab 1.75 EUR bis 9.89 EUR
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AIMZA75R140M1HXKSA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 750V 16A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMZA75R140M1HXKSA1 | Infineon Technologies |
Description: IGBT Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tj) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-TO247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R140M1HXKSA1 | Infineon Technologies |
SiC MOSFETs AUTOMOTIVE_SICMOS |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AIMZA75R140M1HXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 750V 16A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 750V 16A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 76+ | 1.93 EUR |
| 78+ | 1.82 EUR |
| 100+ | 1.75 EUR |
| AIMZA75R140M1HXKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.35 EUR |
| 30+ | 5.32 EUR |
| 120+ | 4.43 EUR |
| AIMZA75R140M1HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs AUTOMOTIVE_SICMOS
SiC MOSFETs AUTOMOTIVE_SICMOS
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.89 EUR |
| 10+ | 5.9 EUR |
| 100+ | 4.88 EUR |
| 480+ | 4.36 EUR |