AIMZH120R020M1TXKSA1 Infineon Technologies
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.27 EUR |
| 10+ | 24.92 EUR |
| 100+ | 23.67 EUR |
| 480+ | 23.65 EUR |
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Technische Details AIMZH120R020M1TXKSA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 13.7mA, Supplier Device Package: PG-TO247-4-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZH120R020M1TXKSA1 nach Preis ab 22.89 EUR bis 38.24 EUR
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AIMZH120R020M1TXKSA1 | Hersteller : Infineon Technologies |
 Description: SIC_DISCRETEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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