AIMZH120R020M1TXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 34.27 EUR |
| 10+ | 24.92 EUR |
| 100+ | 23.67 EUR |
| 480+ | 23.65 EUR |
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Technische Details AIMZH120R020M1TXKSA1 Infineon Technologies
Description: SIC_DISCRETE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Grade: Automotive, Supplier Device Package: PG-TO247-4-11, Vgs(th) (Max) @ Id: 5.1V @ 13.7mA, Power Dissipation (Max): 429W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote AIMZH120R020M1TXKSA1 nach Preis ab 22.89 EUR bis 38.24 EUR
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AIMZH120R020M1TXKSA1 | Infineon Technologies |
 Description: SIC_DISCRETEQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-TO247-4-11 Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMZH120R020M1TXKSA1 |
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Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-TO247-4-11
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-TO247-4-11
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 38.24 EUR |
| 30+ | 24.48 EUR |
| 120+ | 22.89 EUR |