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Technische Details AIMZHN120R120M1TXKSA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V, Power Dissipation (Max): 133W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 2.2mA, Supplier Device Package: PG-TO247-4-14, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZHN120R120M1TXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| AIMZHN120R120M1TXKSA1 | Hersteller : Infineon Technologies |
 SIC_DISCRETE |
Produkt ist nicht verfügbar |
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AIMZHN120R120M1TXKSA1 | Hersteller : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Supplier Device Package: PG-TO247-4-14 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |