AL1J-CT Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 600V 1A DO213AA
Packaging: Strip
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE AVALANCHE 600V 1A DO213AA
Packaging: Strip
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
50+ | 0.54 EUR |
100+ | 0.47 EUR |
250+ | 0.33 EUR |
750+ | 0.19 EUR |
1000+ | 0.17 EUR |
1500+ | 0.15 EUR |
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Technische Details AL1J-CT Diotec Semiconductor
Description: DIODE AVALANCHE 600V 1A DO213AA, Packaging: Strip, Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Avalanche, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AA, MINI-MELF, Operating Temperature - Junction: -50°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 3 µA @ 600 V.