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AL1J-CT

AL1J-CT Diotec Semiconductor

al1a.pdf
Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 600V 1A DO213AA
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 175°C
Supplier Device Package: DO-213AA, MINI-MELF
Current - Average Rectified (Io): 1A
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Strip
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
50+0.54 EUR
100+0.47 EUR
250+0.33 EUR
750+0.19 EUR
1000+0.17 EUR
1500+0.15 EUR
Mindestbestellmenge: 28
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Technische Details AL1J-CT Diotec Semiconductor

Description: DIODE AVALANCHE 600V 1A DO213AA, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 175°C, Supplier Device Package: DO-213AA, MINI-MELF, Current - Average Rectified (Io): 1A, Technology: Avalanche, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AA, Packaging: Strip.