ALD212900APAL Advanced Linear Devices
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.01 EUR |
| 10+ | 12.00 EUR |
| 50+ | 8.99 EUR |
| 500+ | 8.89 EUR |
| 1000+ | 8.13 EUR |
| 5000+ | 8.04 EUR |
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Technische Details ALD212900APAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Rds On (Max) @ Id, Vgs: 14Ohm, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 10mV @ 20µA, Supplier Device Package: 8-PDIP.
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ALD212900APAL Produktcode: 185779
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ALD212900APAL | Hersteller : Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 20µA Supplier Device Package: 8-PDIP |
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