ALD212900APAL
Produktcode: 185779
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > HF-Transistoren
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote ALD212900APAL nach Preis ab 11.47 EUR bis 22.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ALD212900APAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 20µA Supplier Device Package: 8-PDIP |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
ALD212900APAL | Advanced Linear Devices |
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ALD212900APAL |
|
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-PDIP
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-PDIP
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.15 EUR |
| ALD212900APAL |
|
Hersteller: Advanced Linear Devices
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.73 EUR |
| 10+ | 16.54 EUR |
| 100+ | 13.78 EUR |
| 500+ | 12.27 EUR |
| 1000+ | 11.47 EUR |