ALD212900ASAL Advanced Linear Devices
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.12 EUR |
| 10+ | 14.2 EUR |
| 100+ | 11.83 EUR |
| 500+ | 10.53 EUR |
| 1000+ | 9.87 EUR |
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Technische Details ALD212900ASAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Rds On (Max) @ Id, Vgs: 14Ohm, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 10mV @ 20µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote ALD212900ASAL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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ALD212900ASAL | Advanced Linear Devices Inc. |
 Description: MOSFET 2N-CH 10.6V 0.08A 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 20µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ALD212900ASAL |
|
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH