ALD212900ASAL Advanced Linear Devices
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.65 EUR |
| 10+ | 11.16 EUR |
| 50+ | 9.45 EUR |
| 100+ | 9.03 EUR |
| 250+ | 8.5 EUR |
| 500+ | 7.97 EUR |
| 1000+ | 7.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ALD212900ASAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Rds On (Max) @ Id, Vgs: 14Ohm, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 10mV @ 20µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote ALD212900ASAL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
ALD212900ASAL | Hersteller : Advanced Linear Devices Inc. |
 Description: MOSFET 2N-CH 10.6V 0.08A 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 20µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |