AMF12S18LB2ZXKMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: AMF12S18LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 300W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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Technische Details AMF12S18LB2ZXKMA1 Infineon Technologies
Description: AMF12S18LB2ZXKMA1, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.264", 32.10mm), Mounting Type: Through Hole, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C, Technology: Silicon Carbide (SiC), Power - Max: 300W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V, Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V, Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V, Vgs(th) (Max) @ Id: 5.1V @ 11.8mA, Supplier Device Package: DIP 44x28DA, Grade: Automotive, Qualification: AEC-Q101.