AMF12S18LB2ZXKMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 61.67 EUR |
| 10+ | 52.73 EUR |
| 25+ | 50.53 EUR |
| 100+ | 44.39 EUR |
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Technische Details AMF12S18LB2ZXKMA1 Infineon Technologies
Description: AMF12S18LB2ZXKMA1, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.264", 32.10mm), Mounting Type: Through Hole, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C, Technology: Silicon Carbide (SiC), Power - Max: 300W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V, Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V, Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V, Vgs(th) (Max) @ Id: 5.1V @ 11.8mA, Supplier Device Package: DIP 44x28DA, Grade: Automotive, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| AMF12S18LB2ZXKMA1 | Hersteller : Infineon Technologies |
 Description: AMF12S18LB2ZXKMA1Packaging: Tube Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 300W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V Vgs(th) (Max) @ Id: 5.1V @ 11.8mA Supplier Device Package: DIP 44x28DA Grade: Automotive Qualification: AEC-Q101 |
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