Produkte > APC-E > AMR1K0V170E1

AMR1K0V170E1 APC-E


AMR1k0V170E1.pdf
Hersteller: APC-E
SiC MOSFETs 1700V 1000mR, TO247-3L, Industrial Grade
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+8.34 EUR
10+4.68 EUR
120+3.75 EUR
510+3.2 EUR
1020+2.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AMR1K0V170E1 APC-E

Description: 1700V 1000MR, TO247-3L, INDUSTRI, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +27V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-3L, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V.

Weitere Produktangebote AMR1K0V170E1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
AMR1K0V170E1 AMR1K0V170E1 Luminus Devices Inc. AMR1k0V170E1.pdf Description: 1700V 1000MR, TO247-3L, INDUSTRI
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +27V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AMR1K0V170E1 AMR1k0V170E1.pdf
Hersteller: Luminus Devices Inc.
Description: 1700V 1000MR, TO247-3L, INDUSTRI
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +27V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH