AMTP65H150G4PS Analog Power Inc.
Hersteller: Analog Power Inc.
Description: GAN FET N-CH 650V TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
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Technische Details AMTP65H150G4PS Analog Power Inc.
Description: GAN FET N-CH 650V TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V.