AO3160E ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23A-3
Polarisation: unipolar
Gate charge: 0.9nC
Drain current: 30mA
On-state resistance: 500Ω
Power dissipation: 0.89W
Gate-source voltage: ±20V
Drain-source voltage: 600V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1525 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 650+ | 0.11 EUR |
| 740+ | 0.097 EUR |
| 820+ | 0.087 EUR |
| 3000+ | 0.082 EUR |
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Produktbewertung abgeben
Technische Details AO3160E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 40MA SOT23A-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40mA (Ta), Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V, Power Dissipation (Max): 1.39W (Ta), Vgs(th) (Max) @ Id: 3.2V @ 8µA, Supplier Device Package: SOT-23A-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V.
Weitere Produktangebote AO3160E nach Preis ab 0.087 EUR bis 0.93 EUR
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AO3160E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3; ESD Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET Case: SOT23A-3 Polarisation: unipolar Gate charge: 0.9nC Drain current: 30mA On-state resistance: 500Ω Power dissipation: 0.89W Gate-source voltage: ±20V Drain-source voltage: 600V |
auf Bestellung 1525 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3160E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 40MA SOT23A-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 3.2V @ 8µA Supplier Device Package: SOT-23A-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3160E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 40MA SOT23A-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 3.2V @ 8µA Supplier Device Package: SOT-23A-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V |
auf Bestellung 6396 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3160E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 0.04A 3-Pin SOT-23A T/R |
Produkt ist nicht verfügbar |
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AO3160E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 0.04A 3-Pin SOT-23A T/R |
Produkt ist nicht verfügbar |