AO3160E Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 40MA SOT23A-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 3.2V @ 8µA
Supplier Device Package: SOT-23A-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details AO3160E Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 40MA SOT23A-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40mA (Ta), Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V, Power Dissipation (Max): 1.39W (Ta), Vgs(th) (Max) @ Id: 3.2V @ 8µA, Supplier Device Package: SOT-23A-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V.
Weitere Produktangebote AO3160E nach Preis ab 0.35 EUR bis 1.15 EUR
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AO3160E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 40MA SOT23A-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 3.2V @ 8µA Supplier Device Package: SOT-23A-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V |
auf Bestellung 7298 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3160E | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30mA Power dissipation: 0.89W Case: SOT23A-3 Gate-source voltage: ±20V On-state resistance: 500Ω Mounting: SMD Gate charge: 0.9nC Kind of channel: enhancement Version: ESD |
auf Bestellung 1309 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AO3160E |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 40MA SOT23A-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 3.2V @ 8µA
Supplier Device Package: SOT-23A-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V
Description: MOSFET N-CH 600V 40MA SOT23A-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 3.2V @ 8µA
Supplier Device Package: SOT-23A-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 25 V
auf Bestellung 7298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 30+ | 0.71 EUR |
| 50+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| AO3160E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30mA
Power dissipation: 0.89W
Case: SOT23A-3
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30mA
Power dissipation: 0.89W
Case: SOT23A-3
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 1309 Stücke:
Lieferzeit 14-21 Tag (e)