AO4262E ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Trans MOSFET N-CH 60V 16.5A 8-Pin SOIC AO4262E TAO4262e
Anzahl je Verpackung: 50 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.01 EUR |
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Technische Details AO4262E ALPHA&OMEGA
Description: MOSFET N-CHANNEL 60V 16.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16.5A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 30 V.
Weitere Produktangebote AO4262E nach Preis ab 0.43 EUR bis 1.06 EUR
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AO4262E | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 2W; SO8; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Version: ESD |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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| AO4262E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 2W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 2W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 171+ | 0.5 EUR |
| 190+ | 0.45 EUR |
| 200+ | 0.43 EUR |