AO4262E

AO4262E ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1B991A0B27820&compId=AO4262E.pdf?ci_sign=351ed64b5a1afa1f49792217732d7a37948a490f Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 2W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 890 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
77+0.93 EUR
166+0.43 EUR
185+0.39 EUR
187+0.38 EUR
198+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AO4262E ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CHANNEL 60V 16.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16.5A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 30 V.

Weitere Produktangebote AO4262E nach Preis ab 0.35 EUR bis 0.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AO4262E AO4262E Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1B991A0B27820&compId=AO4262E.pdf?ci_sign=351ed64b5a1afa1f49792217732d7a37948a490f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 2W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
166+0.43 EUR
185+0.39 EUR
187+0.38 EUR
198+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
AO4262E AO4262E Hersteller : Alpha & Omega Semiconductor ao4262e.pdf Trans MOSFET N-CH 60V 16.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4262E AO4262E Hersteller : Alpha & Omega Semiconductor 1002680960598945ao4262e.pdf Trans MOSFET N-CH 60V 16.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4262E AO4262E Hersteller : Alpha & Omega Semiconductor Inc. AO4262E.pdf Description: MOSFET N-CHANNEL 60V 16.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH