AO4286

AO4286 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1B991A0B7F820&compId=AO4286.pdf?ci_sign=21624bd095afdbf4501ea861513a2a7df033760d Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 2.8nC
On-state resistance: 68mΩ
Power dissipation: 1.6W
Drain current: 3A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5790 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
307+0.23 EUR
371+0.19 EUR
417+0.17 EUR
486+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 307
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AO4286 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 100V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V.

Weitere Produktangebote AO4286 nach Preis ab 0.14 EUR bis 0.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AO4286 AO4286 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1B991A0B7F820&compId=AO4286.pdf?ci_sign=21624bd095afdbf4501ea861513a2a7df033760d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 2.8nC
On-state resistance: 68mΩ
Power dissipation: 1.6W
Drain current: 3A
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 5790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
307+0.23 EUR
371+0.19 EUR
417+0.17 EUR
486+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 307
Im Einkaufswagen  Stück im Wert von  UAH
AO4286 AO4286 Hersteller : Alpha & Omega Semiconductor ao4286.pdf Trans MOSFET N-CH 100V 4A 8-Pin SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4286 AO4286 Hersteller : Alpha & Omega Semiconductor ao4286.pdf Trans MOSFET N-CH 100V 4A 8-Pin SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4286 AO4286 Hersteller : Alpha & Omega Semiconductor Inc. AO4286.pdf Description: MOSFET N-CH 100V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH