
AO4286 ALPHA & OMEGA SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 2.8nC
On-state resistance: 68mΩ
Power dissipation: 1.6W
Drain current: 3A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5790 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
307+ | 0.23 EUR |
371+ | 0.19 EUR |
417+ | 0.17 EUR |
486+ | 0.15 EUR |
511+ | 0.14 EUR |
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Produktbewertung abgeben
Technische Details AO4286 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V.
Weitere Produktangebote AO4286 nach Preis ab 0.14 EUR bis 0.23 EUR
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AO4286 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Gate charge: 2.8nC On-state resistance: 68mΩ Power dissipation: 1.6W Drain current: 3A Gate-source voltage: ±20V Drain-source voltage: 100V |
auf Bestellung 5790 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4286 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AO4286 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AO4286 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V |
Produkt ist nicht verfügbar |