AO4296

AO4296 Alpha & Omega Semiconductor


217ao4296.pdf Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AO4296 Alpha & Omega Semiconductor

Description: MOSFET N-CH 100V 13.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V.

Weitere Produktangebote AO4296

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AO4296 AO4296 Hersteller : Alpha & Omega Semiconductor ao4296.pdf Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4296 AO4296 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BA52604D9820&compId=AO4296.pdf?ci_sign=c3d0975e20940d6648eb8e4ff8c9cdfd82bb4b6a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 18.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4296 AO4296 Hersteller : Alpha & Omega Semiconductor Inc. AO4296.pdf Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4296 AO4296 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BA52604D9820&compId=AO4296.pdf?ci_sign=c3d0975e20940d6648eb8e4ff8c9cdfd82bb4b6a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 18.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH