AO4405 UMW
Hersteller: UMWDescription: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 0.86 EUR |
| 25+ | 0.73 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.55 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
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Technische Details AO4405 UMW
Description: SOP-8 MOSFETS ROHS, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V.
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Verfügbarkeit |
Preis ohne MwSt |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AO4405 | Hersteller : AOS |
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auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AO4405 | Hersteller : AOSMD |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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AO4405 | Hersteller : UMW |
Description: SOP-8 MOSFETS ROHS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
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